| PART |
Description |
Maker |
| AT42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard)
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 2SC5060 2SC5060TV2M |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
Rohm CO.,LTD.
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| 2SD2143TL 2SD1866TV2 2SD2143 2SD2212 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体
BJT
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
| 2SD2653 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
|
ROHM
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2SD1857 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
